RENESAS 2SC5820WU-TL-E

RENESAS · Transistors (BJTs) · MPN 2SC5820WU-TL-E

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Specifications

Emitter-Base Voltage(Vebo)1.5V
Current - Collector Cutoff1uA
Collector - Emitter Voltage VCEO4V
Pd - Power Dissipation100mW
Current - Collector(Ic)35mA
Transition frequency(fT)20GHz

Technical details

4V 100mW 35mA Bipolar RF Transistors RoHS

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