RENESAS 2SC3127ID-TL-E

RENESAS · Transistors (BJTs) · MPN 2SC3127ID-TL-E

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Specifications

Emitter-Base Voltage(Vebo)3V
Current - Collector Cutoff500nA
Collector - Emitter Voltage VCEO12V
Pd - Power Dissipation150mW
Current - Collector(Ic)50mA
typeNPN

Technical details

12V 150mW 50mA NPN Bipolar RF Transistors RoHS

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