RENESAS 2SC2735JTL-E

RENESAS · Transistors (BJTs) · MPN 2SC2735JTL-E

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Specifications

Emitter-Base Voltage(Vebo)3V
Current - Collector Cutoff500nA
Collector - Emitter Voltage VCEO20V
Pd - Power Dissipation150mW
Current - Collector(Ic)50mA
Transition frequency(fT)1.2GHz
typeNPN
Vce Saturation(VCE(sat))1V
Number1 NPN

Technical details

20V 150mW 50mA NPN SC-59A Bipolar RF Transistors RoHS

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