RENESAS · Transistors (BJTs) · MPN 2SC1009A-T1B-AT
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| Emitter-Base Voltage(Vebo) | 5V |
|---|---|
| Current - Collector Cutoff | 100nA |
| Collector - Emitter Voltage VCEO | 30V |
| Pd - Power Dissipation | 150mW |
| Current - Collector(Ic) | 50mA |
| Transition frequency(fT) | 250MHz |
| type | NPN |
| Vce Saturation(VCE(sat)) | 300mV |
| Number | 1 NPN |
30V 150mW 50mA NPN Bipolar RF Transistors RoHS