RENESAS 2SC1009A-T1B-AT

RENESAS · Transistors (BJTs) · MPN 2SC1009A-T1B-AT

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Specifications

Emitter-Base Voltage(Vebo)5V
Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO30V
Pd - Power Dissipation150mW
Current - Collector(Ic)50mA
Transition frequency(fT)250MHz
typeNPN
Vce Saturation(VCE(sat))300mV
Number1 NPN

Technical details

30V 150mW 50mA NPN Bipolar RF Transistors RoHS

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