REASUNOS · FETs & Power MOSFETs · MPN RSU7N65D
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| Gate Charge(Qg) | 13.3nC@520V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 63W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.6pF |
| RDS(on) | 560mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 493pF |
N-Channel 650V 7A 63W Surface Mount TO-252