REASUNOS RSU5N65F

REASUNOS · FETs & Power MOSFETs · MPN RSU5N65F

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Specifications

Gate Charge(Qg)10.5nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation29W
RDS(on)750mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)0.5pF
Number1 N-channel
Input Capacitance(Ciss)370pF

Technical details

650V 5A 29W Through Hole TO-220F

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