REASUNOS · FETs & Power MOSFETs · MPN RSU4N60F
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 7nC@10V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 32W |
| RDS(on) | 840mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 350pF |
N-Channel 600V 4A 32W Through Hole TO-220F