REASUNOS RSU2N65MD

REASUNOS · FETs & Power MOSFETs · MPN RSU2N65MD

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)3nC@10V
Current - Continuous Drain(Id)1.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation22W
RDS(on)2.2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)1pF
Number1 N-channel
Input Capacitance(Ciss)183pF

Technical details

650V 1.8A 22W Through Hole TO-251

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