REASUNOS · FETs & Power MOSFETs · MPN RSU2N65MD
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 3nC@10V |
| Current - Continuous Drain(Id) | 1.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 22W |
| RDS(on) | 2.2Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 183pF |
650V 1.8A 22W Through Hole TO-251