REASUNOS RSU12N65D

REASUNOS · FETs & Power MOSFETs · MPN RSU12N65D

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Specifications

Gate Charge(Qg)19nC@520V
Drain to Source Voltage650V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation80W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)390mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)850pF

Technical details

N-Channel 650V 12A 80W Surface Mount TO-252

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