REASUNOS RSM1701K0W

REASUNOS · FETs & Power MOSFETs · MPN RSM1701K0W

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Specifications

Gate Charge(Qg)21.8nC
Drain to Source Voltage1.7kV
Output Capacitance(Coss)12pF
Current - Continuous Drain(Id)5A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation69W
RDS(on)1Ω@20V
Reverse Transfer Capacitance (Crss@Vds)1.6pF
Number1 N-channel
Input Capacitance(Ciss)186pF
TypeN-Channel

Technical details

1.7kV 5A 3V 69W 1Ω@20V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

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