REASUNOS RSM120040W

REASUNOS · FETs & Power MOSFETs · MPN RSM120040W

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Specifications

Gate Charge(Qg)121nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)112pF
Current - Continuous Drain(Id)68A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation340W
RDS(on)40mΩ@18V
Reverse Transfer Capacitance (Crss@Vds)11pF
Number1 N-channel
Input Capacitance(Ciss)2.07nF
TypeN-Channel

Technical details

N-Channel 1.2kV 68A 340W Through Hole TO-247-3

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