REASUNOS · FETs & Power MOSFETs · MPN RSF65T160D
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| Gate Charge(Qg) | 33.8nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 22A |
| Output Capacitance(Coss) | 52pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 119W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF |
| RDS(on) | 130mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.656nF |
650V 22A 4.5V 119W 130mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS