REASUNOS RSF65T110F

REASUNOS · FETs & Power MOSFETs · MPN RSF65T110F

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Specifications

Gate Charge(Qg)48nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)68pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)90mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.134nF

Technical details

650V 30A 4.5V 31W 90mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS

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