REASUNOS RSF65R070W

REASUNOS · FETs & Power MOSFETs · MPN RSF65R070W

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Specifications

Gate Charge(Qg)83nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)42A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation298W
RDS(on)63mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)2.3pF
Number1 N-channel
Input Capacitance(Ciss)3.94nF

Technical details

650V 42A 5V 298W 63mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS

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