REASUNOS RSF60T090F

REASUNOS · FETs & Power MOSFETs · MPN RSF60T090F

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Specifications

Gate Charge(Qg)56nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)40A
Output Capacitance(Coss)68pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation50.6W
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)71mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.898nF

Technical details

600V 40A 5V 50.6W 71mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS

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