REASUNOS RSF60T070F

REASUNOS · FETs & Power MOSFETs · MPN RSF60T070F

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)70nC@10V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss@Vds)4.3pF
RDS(on)57mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.421nF

Technical details

600V 55A 5V 54W 57mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS

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