REASUNOS RSF60T037W

REASUNOS · FETs & Power MOSFETs · MPN RSF60T037W

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Specifications

Gate Charge(Qg)132nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)198pF
Current - Continuous Drain(Id)72A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation451W
Reverse Transfer Capacitance (Crss@Vds)5.6pF
RDS(on)31mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.084nF

Technical details

600V 72A 5V 451W 31mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS

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