REASUNOS RSF60T026W

REASUNOS · FETs & Power MOSFETs · MPN RSF60T026W

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)192nC@10V
Current - Continuous Drain(Id)100A
Output Capacitance(Coss)37pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation625W
Reverse Transfer Capacitance (Crss@Vds)7.6pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.374nF

Technical details

600V 100A 5V 625W 20mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS

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