REASUNOS RSF60R150F

REASUNOS · FETs & Power MOSFETs · MPN RSF60R150F

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)22A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation34W
RDS(on)130mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)2.6pF
Number-
Input Capacitance(Ciss)2.18nF

Technical details

600V 22A 34W 130mΩ@10V TO-220F Single FETs, MOSFETs RoHS

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