REASUNOS RSF60R099F

REASUNOS · FETs & Power MOSFETs · MPN RSF60R099F

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Specifications

Gate Charge(Qg)75nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)31A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation35W
RDS(on)86mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)3.3pF
Number1 N-channel
Input Capacitance(Ciss)3.3nF

Technical details

N-Channel 600V 31A 35W Through Hole TO-220F

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