REASUNOS RSF55R190F

REASUNOS · FETs & Power MOSFETs · MPN RSF55R190F

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Specifications

Drain to Source Voltage550V
Gate Charge(Qg)26nC@10V
Output Capacitance(Coss)37pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation112W
Reverse Transfer Capacitance (Crss@Vds)0.78pF
RDS(on)165mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.046nF

Technical details

550V 20A 5V 112W 165mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS

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