REASUNOS RSF50R190F

REASUNOS · FETs & Power MOSFETs · MPN RSF50R190F

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation112W
RDS(on)160mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)420fF
Number1 N-channel
Input Capacitance(Ciss)1.044nF

Technical details

500V 20A 5V 112W 160mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS

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