REASUNOS RSF50R090F

REASUNOS · FETs & Power MOSFETs · MPN RSF50R090F

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Specifications

Gate Charge(Qg)50nC@0V
Drain to Source Voltage500V
Current - Continuous Drain(Id)40A
Output Capacitance(Coss)82pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)0.65pF
RDS(on)78mΩ@10V
Input Capacitance(Ciss)2.187nF

Technical details

500V 40A 4V 35W 78mΩ@10V TO-220F Single FETs, MOSFETs RoHS

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