REASUNOS RSF4N60F

REASUNOS · FETs & Power MOSFETs · MPN RSF4N60F

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Specifications

Gate Charge(Qg)15nC@4.5V
Drain to Source Voltage600V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation36W
RDS(on)2.3Ω@10V
Reverse Transfer Capacitance (Crss@Vds)10.5pF
Number1 N-channel
Input Capacitance(Ciss)580pF

Technical details

N-Channel 600V 4A 36W Through Hole TO-220F

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