REASUNOS RSF3N60D

REASUNOS · FETs & Power MOSFETs · MPN RSF3N60D

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)12nC@10V
Current - Continuous Drain(Id)3A
Output Capacitance(Coss)50pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation57W
RDS(on)2.8Ω@10V
Reverse Transfer Capacitance (Crss@Vds)13pF
Number1 N-channel
Input Capacitance(Ciss)390pF

Technical details

600V 3A 4V 57W 2.8Ω@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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