REASUNOS · FETs & Power MOSFETs · MPN RSF3N60D
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Current - Continuous Drain(Id) | 3A |
| Output Capacitance(Coss) | 50pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 57W |
| RDS(on) | 2.8Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 390pF |
600V 3A 4V 57W 2.8Ω@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS