REASUNOS RSE80R850D

REASUNOS · FETs & Power MOSFETs · MPN RSE80R850D

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Specifications

Gate Charge(Qg)13.7nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation66W
RDS(on)740mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)2.5pF
Number1 N-channel
Input Capacitance(Ciss)635pF

Technical details

N-Channel 800V 7A 66W Surface Mount TO-252

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