REASUNOS · FETs & Power MOSFETs · MPN RSE80R850D
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| Gate Charge(Qg) | 13.7nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 66W |
| RDS(on) | 740mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 635pF |
N-Channel 800V 7A 66W Surface Mount TO-252