REASUNOS RSE80R250F

REASUNOS · FETs & Power MOSFETs · MPN RSE80R250F

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)43nC@10V
Output Capacitance(Coss)33pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation33W
RDS(on)220mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)3.2pF
Number1 N-channel
Input Capacitance(Ciss)2nF
Vgs±20V

Technical details

N-Channel 800V 18A 33W Through Hole TO-220F

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