REASUNOS RSE80R180W

REASUNOS · FETs & Power MOSFETs · MPN RSE80R180W

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)58nC@10V
Output Capacitance(Coss)92pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation137W
Reverse Transfer Capacitance (Crss@Vds)2.4pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.855nF

Technical details

800V 25A 5V 137W 160mΩ@10V 1 N-channel TO-247 Single FETs, MOSFETs RoHS

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