REASUNOS RS9N90S

REASUNOS · FETs & Power MOSFETs · MPN RS9N90S

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Specifications

Drain to Source Voltage900V
Gate Charge(Qg)64nC@15V
Output Capacitance(Coss)148pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation160W
RDS(on)1.2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)31pF
Number1 N-channel
Input Capacitance(Ciss)1.572nF

Technical details

900V 9A 4V 160W 1.2Ω@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS

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