REASUNOS RS9N90F

REASUNOS · FETs & Power MOSFETs · MPN RS9N90F

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Specifications

Gate Charge(Qg)64nC@720V
Drain to Source Voltage900V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.514nF

Technical details

N-Channel 900V 9A 68W Through Hole TO-220F

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