REASUNOS RS9N65D

REASUNOS · FETs & Power MOSFETs · MPN RS9N65D

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation170W
RDS(on)950mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-channel
Input Capacitance(Ciss)1.246nF

Technical details

650V 9A 170W Surface Mount TO-252

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