REASUNOS RS8N60F

REASUNOS · FETs & Power MOSFETs · MPN RS8N60F

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)35nC@10V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)130pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.42nF

Technical details

650V 8A 4V 35W 750mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS

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