REASUNOS · FETs & Power MOSFETs · MPN RS8N60F
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 35nC@10V |
| Current - Continuous Drain(Id) | 8A |
| Output Capacitance(Coss) | 130pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 35W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 750mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.42nF |
650V 8A 4V 35W 750mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS