REASUNOS RS85N150T

REASUNOS · FETs & Power MOSFETs · MPN RS85N150T

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Specifications

Gate Charge(Qg)130nC@10V
Drain to Source Voltage85V
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation310W
RDS(on)2.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)43pF
Number1 N-channel
Input Capacitance(Ciss)7.447nF

Technical details

85V 150A 310W Through Hole TO-220

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