REASUNOS RS85N150S

REASUNOS · FETs & Power MOSFETs · MPN RS85N150S

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Specifications

Gate Charge(Qg)130nC@68V
Drain to Source Voltage85V
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation312W
Reverse Transfer Capacitance (Crss@Vds)43pF
RDS(on)2.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.447nF

Technical details

N-Channel 85V 150A 312W Surface Mount TO-263

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