REASUNOS RS80R500F

REASUNOS · FETs & Power MOSFETs · MPN RS80R500F

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Specifications

Gate Charge(Qg)24.6nC@400V
Drain to Source Voltage800V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)1pF
RDS(on)420mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.099nF

Technical details

N-Channel 800V 9A 52W Through Hole TO-220F

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