REASUNOS RS7N65F

REASUNOS · FETs & Power MOSFETs · MPN RS7N65F

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Specifications

Gate Charge(Qg)32nC@520V
Drain to Source Voltage650V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)1.1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)891pF

Technical details

N-Channel 650V 7A 35W Through Hole TO-220F

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