REASUNOS · FETs & Power MOSFETs · MPN RS7N65BD
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| Gate Charge(Qg) | 21nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 7A |
| Output Capacitance(Coss) | 90pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 95W |
| RDS(on) | 1.2Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.153nF |
| Type | N-Channel |
650V 7A 4V 95W 1.2Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS