REASUNOS RS75N20T

REASUNOS · FETs & Power MOSFETs · MPN RS75N20T

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)75A
Output Capacitance(Coss)200pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation330W
RDS(on)17mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)13pF
Number1 N-channel
Input Capacitance(Ciss)3.3nF

Technical details

200V 75A 4.5V 330W 17mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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