REASUNOS RS70R600D

REASUNOS · FETs & Power MOSFETs · MPN RS70R600D

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage700V
Output Capacitance(Coss)36pF
Current - Continuous Drain(Id)7.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)1.7pF
RDS(on)530mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)473pF

Technical details

700V 7.3A 4V 60W 530mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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