REASUNOS RS6N90F

REASUNOS · FETs & Power MOSFETs · MPN RS6N90F

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Specifications

Gate Charge(Qg)48nC@720V
Drain to Source Voltage900V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)1.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.215nF

Technical details

N-Channel 900V 6A 54W Through Hole TO-220F

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