REASUNOS RS6N50D

REASUNOS · FETs & Power MOSFETs · MPN RS6N50D

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Specifications

Gate Charge(Qg)14.4nC@400V
Drain to Source Voltage500V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)4.7pF
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)535pF

Technical details

N-Channel 500V 6A 75W Surface Mount TO-252

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