REASUNOS RS65T360F

REASUNOS · FETs & Power MOSFETs · MPN RS65T360F

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Specifications

Gate Charge(Qg)17.5nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)11A
Output Capacitance(Coss)45pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)5.5pF
RDS(on)310mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)574pF

Technical details

650V 11A 4.5V 33W 310mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS

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