REASUNOS · FETs & Power MOSFETs · MPN RS65T360D
No reviews yet — be the first to review REASUNOS RS65T360D.
| Gate Charge(Qg) | 17.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 11A |
| Output Capacitance(Coss) | 45pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 134W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.5pF |
| RDS(on) | 310mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 574pF |
650V 11A 4.5V 134W 310mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS