REASUNOS RS65R600F

REASUNOS · FETs & Power MOSFETs · MPN RS65R600F

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)7.3A
Output Capacitance(Coss)35pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)1.7pF
RDS(on)520mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)471pF
TypeN-Channel

Technical details

650V 7.3A 4V 28W 520mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

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