REASUNOS · FETs & Power MOSFETs · MPN RS65R600D
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 13nC@10V |
| Current - Continuous Drain(Id) | 7.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 60W |
| RDS(on) | 520mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.7pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 471pF |
650V 7.3A 2V 60W 520mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS