REASUNOS RS65R380F

REASUNOS · FETs & Power MOSFETs · MPN RS65R380F

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Specifications

Gate Charge(Qg)19.2nC@520V
Drain to Source Voltage650V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)340mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)852pF

Technical details

N-Channel 650V 11A 33W Through Hole TO-220F

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