REASUNOS RS65R380D

REASUNOS · FETs & Power MOSFETs · MPN RS65R380D

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Specifications

Gate Charge(Qg)19.2nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation118W
RDS(on)340mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)2pF
Number1 N-channel
Input Capacitance(Ciss)852pF

Technical details

650V 11A 118W Surface Mount TO-252

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