REASUNOS RS65R280BF

REASUNOS · FETs & Power MOSFETs · MPN RS65R280BF

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)13.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)3.6pF
RDS(on)240mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)981pF
TypeN-Channel

Technical details

650V 13.8A 4V 33W 240mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

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