REASUNOS RS65R250HF

REASUNOS · FETs & Power MOSFETs · MPN RS65R250HF

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Specifications

Gate Charge(Qg)24.9nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)27.7pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation32W
RDS(on)225mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1.76pF
Number1 N-channel
Input Capacitance(Ciss)1.1nF

Technical details

650V 15A 4.5V 32W 225mΩ@10V 1 N-channel TO-220F Single FETs, MOSFETs RoHS

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