REASUNOS · FETs & Power MOSFETs · MPN RS65R190BD
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| Gate Charge(Qg) | 36nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 101pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 136W |
| RDS(on) | 170mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF |
| Input Capacitance(Ciss) | 1.49nF |
650V 20A 4V 136W 170mΩ@10V PTO-252 Single FETs, MOSFETs RoHS